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Advance Product Information
December 17, 2002
13 - 17 GHz 2 Watt, 32dB Power Amplifier
* * * * * * *
TGA2503-EPU
Key Features and Performance
33 dBm Midband Pout 32 dB Nominal Gain 10 dB Typical Return Loss Built-in Directional Power Detector with Reference 0.5m pHEMT, 3MI Technology Bias Conditions: 7V, 680mA Chip dimensions: 2.5 x 1.4 x 0.1 mm (98 x 55 x 4 mils)
Preliminary Measured Data
Bias Conditions: Vd=7V Id=680mA
40 35 30 25 20 15 10 11 12 13 14 15 16 17 18 19 5
Primary Applications
* *
Return Loss (dB)
S21 S11 S22
0 -5 -10 -15 -20 -25
VSAT Point-to-Point
Gain (dB)
Frequency (GHz)
35 34 33 32 31 30 29 28 27 26 25 11 12 13 14 15 16 17 18 19 Psat PAE 60 55 50 45 40 35 30 25 20 15 10
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
PAE@Psat (%)
Psat (dBm)
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
1
Advance Product Information
December 17, 2002
TABLE I MAXIMUM RATINGS Symbol V I
+ -
TGA2503-EPU
Value 8V -5V to 0V TBD 18 mA 21.4 dBm 6.83 W 150 C 320 C -65 to 150 C
0 0 0
Parameter 1/ Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Notes 2/ 2/ 2/ 2/ 3/ 4/ 5/
V
+
| IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this bias condition with a base plate temperature of 70C, the median life is reduced from 8.9E+6 to 1E+6. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
TABLE II DC PROBE TEST (TA = 25 C, Nominal) NOTES 1/ 1/ 2/ 2/ 2/ SYMBOL IDSS GM |VP| |VBVGS| |VBVGD| MIN 80 176 0.5 8 13 LIMITS MAX 381 424 1.5 30 30 UNITS mA mS V V V
1/ Measurements are performed on a 800mm FET. 2/ VP, VBVGD, and VBVGS are negative.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
2
Advance Product Information
December 17, 2002
TGA2503-EPU
TABLE III RF CHARACTERIZATION TABLE (TA = 25C, Nominal) (Vd = 7V, Id = 680mA 5%) SYMBOL PARAMETER TEST CONDITION F = 13-17 MIN LIMITS TYP MAX 32 UNITS
Gain
Small Signal Gain
dB
IRL
Input Return Loss
F = 13-17
10
dB
ORL
Output Return Loss
F = 13-17
10
dB
PWR
Output Power @ Pin = +5 dBm
F = 13-17
33
dBm
Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements.
TABLE IV THERMAL INFORMATION PARAMETER Rqjc Thermal Resistance (Channel to Backside) TEST CONDITION VD = 7V ID = 680mA PD = 4.76W TCH (C) 125.74 Rqjc (C/W) 11.71 MTTF (HRS) 8.9E+6
Note: Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil CuMo carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
3
Advance Product Information
December 17, 2002
Typical Fixtured Performance
37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 11 12 13 14 15 16 17
TGA2503-EPU
Gain (dB)
18
19
Frequency (GHz)
0 -5
S11 S22
S11,S22 (dB)
-10 -15 -20 -25 -30 11 12 13 14 15 16 17 18 19
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
4
Advance Product Information
December 17, 2002
Typical Fixtured Performance
35 34.5 34 33.5
TGA2503-EPU
Psat P2dB
Pout (dBm)
33 32.5 32 31.5 31 30.5 30 11 40 35 30 Psat P2dB 12 13 14 15 16 17 18 19
Frequency (GHz)
PAE (%)
25 20 15 10 11 12 13 14 15 16 17 18 19
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 5
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
December 17, 2002
Typical Fixtured Performance
37 35 33 Output Power (dBm) 31 29 27 25 23 21 19 17
-14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
13.5 GHz 14.0 GHz 14.5 GHz
TGA2503-EPU
2.6 2.4 2.2 2 Id (A)
6
1.8 1.6 1.4 1.2 1 0.8 0.6
10
Input power (dBm)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
December 17, 2002
Typical Fixtured Performance 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 5
45 44 43 42
TGA2503-EPU
IMD3 (dBm)
13 GHz 14 GHz 15 GHz
10
15
20
25
30
35
Pout / Tone (dBm)
IP3 (dBm)
41 40 39 38 37 36 35 12 13 14 15 16 17 18
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
7
Advance Product Information
December 17, 2002
TGA2503-EPU Mechanical Drawing
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
8
Advance Product Information
December 17, 2002
TGA2503-EPU Power Detector
+5V
40KW
40KW
External
Vref Vdet
MMIC
5pF
50W
DUT
RF out
0.6 0.5
TGA2503 Power Detector @ 14GHz
Vref-Vdet (V)
0.4 0.3 0.2 0.1 0 0
(20 dBm)
10
(26 dBm)
20
(29.5 dBm) (32 dBm) (34 dBm)
30
40
50
60
sqrt Pout (mW^0.5)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
9
Advance Product Information
December 17, 2002
TGA2503-EPU Chip Assembly & Bonding Diagram
Vd
100pF Off chip R=10W Off chip C=0.1mF
Input TFN
Output TFN
Vg
Off chip R=10W Off chip C=0.1mF
100pF
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
10
Advance Product Information
December 17, 2002
TGA2503-EPU Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
11

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